Dr. Loi Nguyen

As one of Inphi’s founders, Dr. Loi Nguyen has more than 20 years of experience in the development of high-speed devices and integrated circuits based on advanced gallium arsenide (GaAs) and indium phosphide (InP) technologies. He is well recognized in the high-speed III-V research community worldwide for his work in this field.

From 1984 to 1988, Dr. Nguyen worked at the Honeywell Physical Sciences Center in Bloomington, Minnesota, while writing his graduate thesis on the development of GaAs devices. His thesis contributed to the commercialization of advanced GaAs technology for applications such as direct broadcast satellite (DBS), millimeter wave radios, automotive radar, and defense. In 1992 he established a world-record cutoff frequency for high-speed transistors, for which he received the prestigious IEEE Paul Rappaport Award for Best Paper published in an Electron Devices Society journal.

Dr. Nguyen holds seven U.S. patents and is an author of more than 50 scientific publications. He has served on technical committees of the IEEE International Electron Devices Meetings, the IEEE Device Research Conference and the IEEE International Solid State Devices Meetings.

Dr. Nguyen holds B.S. and Ph.D. degrees in electrical engineering from Cornell University and an MBA from the Anderson School of Management at UCLA.